The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2012

Filed:

Apr. 10, 2007
Applicants:

Jeo-young Shim, Yongin-si, KR;

Kyu-tae Yoo, Yongin-si, KR;

Kyu-sang Lee, Yongin-si, KR;

Won-seok Chung, Yongin-si, KR;

Yeon-ja Cho, Yongin-si, KR;

Chang-eun Yoo, Yongin-si, KR;

Inventors:

Jeo-young Shim, Yongin-si, KR;

Kyu-tae Yoo, Yongin-si, KR;

Kyu-sang Lee, Yongin-si, KR;

Won-seok Chung, Yongin-si, KR;

Yeon-ja Cho, Yongin-si, KR;

Chang-eun Yoo, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.


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