The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2012

Filed:

Jan. 26, 2011
Applicant:

Chuan-lung Chuang, Taoyuan, TW;

Inventor:

Chuan-Lung Chuang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (CuS) or cuprous selenide (CuSe) target. Then, a CIGS thin film is further provided on the thermal expansion buffer layer. Finally, a thermal treatment is conducted for melting to integrate the copper ingredients of different thin film layers, thus improving the bondability between the thin film layers and preventing the cracking or the peeling off of the thin film layers caused by the thermal expansion difference.


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