The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Dec. 26, 2008
Kwang Bum Park, Gyungkido Yonginsi, KR;
Seong Dong Kim, Gyungkido Yonginsi, KR;
Joon Shik Park, Seoul, KR;
Min Ho Lee, Seoul, KR;
Kwang Bum Park, Gyungkido Yonginsi, KR;
Seong Dong Kim, Gyungkido Yonginsi, KR;
Joon Shik Park, Seoul, KR;
Min Ho Lee, Seoul, KR;
Korea Electronics Technology Institute, Seongnam, Gyeonggi Province, KR;
Abstract
There are provided a micro gas sensor and a method for fabricating the same that comprises a micro heater formed inside a polysilicon membrane by doping impurities into a specific region of the polysilicon membrane positioned under a gas sensing substance, thereby improving thermal structural stability and making it easy to form the gas sensing substance. The micro gas sensor comprises: a micro heater formed by doping impurities into polysilicon vapor-deposited on a substrate on which a first insulating layer is formed; a polysilicon membrane for decreasing a heat loss of the micro heater; a power electrode for supplying power and a temperature measurement electrode for measuring a temperature, positioned at both ends of the micro heater; a second insulating layer formed on the micro heater; a sensing substance formed on the second insulating layer, for sensing a gas; and a sensing electrode for measuring a change in properties of the sensing substance. The method for fabricating a micro gas sensor comprises steps of: forming polysilicon on a substrate on which a first insulating layer is formed; forming a micro heater by doping impurities into the polysilicon; forming electrodes at both ends of the micro heater; forming a second insulating layer on the micro heater; forming a sensing substance on the second insulating layer; and forming a sensing electrode on the sensing substance.