The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Apr. 25, 2005
Stefan Illek, Donaustauf, DE;
Wilhelm Stein, Lindau, DE;
Robert Walter, Parsberg, DE;
Ralph Wirth, Pettendorf-Adlersberg, DE;
Stefan Illek, Donaustauf, DE;
Wilhelm Stein, Lindau, DE;
Robert Walter, Parsberg, DE;
Ralph Wirth, Pettendorf-Adlersberg, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
In a method for producing at least at least one area () with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (), a ZnO layer () is applied to the area () of the semiconductor layer () and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer () is preferably deposited on the III-V semiconductor layer () at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area () with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone () and a connecting contact () in order to reduce current injection into the areas of the active zone () located opposite to the connecting contact ().