The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2012

Filed:

Mar. 02, 2011
Applicants:

James Karp, Saratoga, CA (US);

Steven P. Young, Boulder, CO (US);

Bernard J. New, Carmel Valley, CA (US);

Scott S. Nance, Grass Valley, CA (US);

Patrick J. Crotty, San Jose, CA (US);

Inventors:

James Karp, Saratoga, CA (US);

Steven P. Young, Boulder, CO (US);

Bernard J. New, Carmel Valley, CA (US);

Scott S. Nance, Grass Valley, CA (US);

Patrick J. Crotty, San Jose, CA (US);

Assignee:

Xilinx, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An embodiment of a method to form a hybrid integrated circuit device is described. This embodiment of the method comprises: forming a first die using a first lithography, where the first die is on a substrate; and forming a second die using a second lithography, where the second die is on the first die. The first lithography used to form the first die is a larger lithography than the second lithography used to form the second die. The first die is an IO die.


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