The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Dec. 19, 2008
Michimasa Miyanaga, Itami, JP;
Naho Mizuhara, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Issei Satoh, Itami, JP;
Hisao Takeuchi, Itami, JP;
Hideaki Nakahata, Itami, JP;
Michimasa Miyanaga, Itami, JP;
Naho Mizuhara, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Issei Satoh, Itami, JP;
Hisao Takeuchi, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a materialtherein is prepared. Then, materialis arranged on one side of heat-shielding portion in chamber. Then, by heating material to be sublimated, a material gas is deposited on the other side of heat-shielding portion in chamber so that a Group III nitride semiconductor crystal is grown.