The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Feb. 09, 2011
Igor Vurgaftman, Odenton, MD (US);
Jerry R. Meyer, Catonsville, MD (US);
Chadwick L. Canedy, Washington, DC (US);
William W. Bewley, Falls Church, VA (US);
James R. Lindle, Bowie, MD (US);
Chul-soo Kim, Springfield, VA (US);
Mijin Kim, Springfield, VA (US);
Igor Vurgaftman, Odenton, MD (US);
Jerry R. Meyer, Catonsville, MD (US);
Chadwick L. Canedy, Washington, DC (US);
William W. Bewley, Falls Church, VA (US);
James R. Lindle, Bowie, MD (US);
Chul-soo Kim, Springfield, VA (US);
Mijin Kim, Springfield, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cmand threshold power density of about 900 W/cm.