The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Nov. 18, 2010
Applicant:
Seiji Matsuyama, Ibaraki, JP;
Inventor:
Seiji Matsuyama, Ibaraki, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes: a semiconductor substrate; an interface layer formed on the semiconductor substrate; a high-k gate dielectric film formed on the interface layer; and a gate electrode formed on the high-k gate dielectric film. The high-k gate dielectric film contains La. The high-k gate dielectric film has the higher La concentration in an interface with the gate electrode than in an interface with the interface layer.