The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Aug. 31, 2009
Mikael T. Bjoerk, Rueschlikon, CH;
Siegfried F. Karg, Rueschlikon, CH;
Joachim Knoch, Obfelden, CH;
Heike E. Riel, Rueschlikon, CH;
Walter H. Riess, Rueschlikon, CH;
Paul M. Solomon, Yorktown Heights, NY (US);
Mikael T. Bjoerk, Rueschlikon, CH;
Siegfried F. Karg, Rueschlikon, CH;
Joachim Knoch, Obfelden, CH;
Heike E. Riel, Rueschlikon, CH;
Walter H. Riess, Rueschlikon, CH;
Paul M. Solomon, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.