The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Jan. 12, 2012
Wein-town Sun, Kaohsiung, TW;
Chun-sheng LI, Kaohsiung, TW;
Jian-shen Yu, Hsinchu, TW;
Au Optronics Corp., Hsinchu, TW;
Abstract
A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a shaped of L- or of snake from top-view, having a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the poly-Si layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the poly-Si layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line through a source contact.