The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2012

Filed:

Aug. 12, 2010
Applicants:

Shinji Maekawa, Tokyo, JP;

Miyuki Suzuki, Tokyo, JP;

Inventors:

Shinji Maekawa, Tokyo, JP;

Miyuki Suzuki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

To provide a through hole electrode substrate and a semiconductor device which uses the through hole electrode substrate which have improved electrical properties in a conductive part which passes through the front and back of a substrate, a through hole electrode substrateof the invention comprises a substratehaving a through holewhich passes through the front and back of the substrate, and a conductive partincluding a metal material which is filled into the through hole, the conductive partincluding at least a metal material having an area weighted average crystal grain diameter of 13 μm or more. The conduction partalso includes a metal material having a crystal grain diameter of 29 μm or more. Further one end of the conductive part includes at least a metal material having an area weighted average crystal grain diameter of less than 13 μm, and the other end of the conductive part includes at least a metal material having an area weighted average crystal grain diameter of 13 μm or more.


Find Patent Forward Citations

Maekawa, Shinji. (2012). Through hole electrode substrate with different area weighted average crystal grain diameter of metal in the conductive part and semiconductor device using the through hole electrode substrate (U.S. Patent No. 8288772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8288772

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…