The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Jan. 04, 2010
Ching-fuh Lin, Taipei, TW;
Chun-yu Lee, Taipei, TW;
Ching-Fuh Lin, Taipei, TW;
Chun-Yu Lee, Taipei, TW;
National Taiwan University, Taipei, TW;
Abstract
A method for forming a thin-film transistor (TFT) includes providing a substrate, forming a first patterned conducting layer on the substrate, forming an organic dielectric layer on the first patterned conducting layer and the substrate, forming a seeding layer on the organic dielectric layer, using the seeding layer as a crystal growing base to form an inorganic semiconductor layer on the seeding layer, and forming a second patterned conducting layer on the inorganic semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile