The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2012

Filed:

Apr. 13, 2010
Applicants:

Mitsuhiko Noda, Yokohama, JP;

Mitsuhiro Noguchi, Yokohama, JP;

Hiroomi Nakajima, Yokohama, JP;

Masato Endo, Yokohama, JP;

Inventors:

Mitsuhiko Noda, Yokohama, JP;

Mitsuhiro Noguchi, Yokohama, JP;

Hiroomi Nakajima, Yokohama, JP;

Masato Endo, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device includes a plurality of memory cell arrays each includes a plurality of memory cells, the plurality of memory cell arrays being stacked on a semiconductor substrate to form a three-dimensional structure, a first well formed in the semiconductor substrate and having a first conductivity type, an element isolation insulating film including a bottom surface shallower than a bottom surface of the first well in the first well, and buried in the semiconductor substrate, a second well including a bottom surface shallower than the bottom surface of the first well in the first well, formed along a bottom surface of at least a portion of the element isolation insulating film, and made of an impurity having a second conductivity type, and a contact line electrically connected to the first well.


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