The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Apr. 09, 2010
Kiyoshi Arita, Osaka, JP;
Hiroshi Haji, Osaka, JP;
Kiyoshi Arita, Osaka, JP;
Hiroshi Haji, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
To provide a substrate processing method and a semiconductor chip manufacturing method that enable low-cost formation of a mask for etching using plasma etching. During formation of a mask used in plasma dicing for separating a semiconductor waferinto discrete semiconductor chipsby means of etching using plasma processing, there is adopted a method including printing a lyophobic liquid in an area on a rear surfacethat is to be an objective of etching, thereby forming a lyophobic pattern made up of lyophobic films; supplying a low viscosity resinand a high viscosity resin, in this sequence, to the rear surfaceon which the lyophobic pattern is formed, thereby forming a resin filmthat is thicker than the lyophobic filmsin an area where the lyophobic filmsare not present; and curing the resin film, to thus form a mask* that covers an area except for the area to be etched. Thus, a mask for etching purpose can be formed at low cost without use of a high-cost method, like photolithography.