The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Feb. 22, 2011
Joon-sung Lim, Yongin-si, KR;
Jongho Park, Seoul, KR;
Okcheon Hong, Yongin-si, KR;
Jung-hwan Park, Hwaseong-si, KR;
Joon-Sung Lim, Yongin-si, KR;
Jongho Park, Seoul, KR;
Okcheon Hong, Yongin-si, KR;
Jung-Hwan Park, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Semiconductor devices and a methods of fabricating the semiconductor devices are provided. The methods may include forming a pattern on a substrate, forming a capping dielectric layer on the pattern, and thermally processing the substrate. After thermally processing the substrate, the methods may further include forming a diffusion barrier layer by a nitride process that may include supplying nitrogen to the capping dielectric layer. The methods may also include forming an etching stop layer on the diffusion barrier layer, forming an inter-layer dielectric layer on the etching stop layer, and planarizing the inter-layer dielectric layer.