The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Apr. 20, 2009
Applicants:
Cedric Ducros, Bevenais, FR;
Frederic Sanchette, Montferrat, FR;
Christophe Secouard, L'Isle Adam, FR;
Inventors:
Cedric Ducros, Bevenais, FR;
Frederic Sanchette, Montferrat, FR;
Christophe Secouard, L'Isle Adam, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for fabricating a silicon-based thin-film photovoltaic cell, applicable for example in the energy generation field. The fabrication process includes a) depositing a p-doped or n-doped amorphous silicon film, the X-ray diffraction spectrum of which has a line centered at 28° that has a mid-height width, denoted by a, such that 4.7°≦a<6.0°, on a substrate.