The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Oct. 14, 2008
Michiko Takei, Osaka, JP;
Yutaka Takafuji, Osaka, JP;
Yasumori Fukushima, Osaka, JP;
Kazuhide Tomiyasu, Osaka, JP;
Steven Roy Droes, Camas, WA (US);
Michiko Takei, Osaka, JP;
Yutaka Takafuji, Osaka, JP;
Yasumori Fukushima, Osaka, JP;
Kazuhide Tomiyasu, Osaka, JP;
Steven Roy Droes, Camas, WA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A production method for producing a semiconductor device capable of improving surface flatness and suppressing a variation in electrical characteristics of the semiconductor chip, and improving production yield. The production method includes the steps of: forming a first insulating film on a semiconductor substrate and on a conductive pattern film formed on the semiconductor substrate and reducing a thickness of the first insulating film in a region where the conductive pattern film is arranged by patterning; forming a second insulating film and polishing the second insulating film, thereby forming a flattening film; implanting a substance for cleavage into the semiconductor substrate through the flattening film, thereby forming a cleavage layer; transferring the semiconductor chip onto a substrate with an insulating surface so that the chip surface on the side opposite to the semiconductor substrate is attached thereto; and separating the semiconductor substrate from the cleavage layer.