The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Nov. 10, 2008
Chan Wook Baik, Seongnam-si, KR;
Junhee Choi, Seongnam-si, KR;
Seog Woo Hong, Yongin-si, KR;
Joo Ho Lee, Hwaseong-si, KR;
Chan Wook Baik, Seongnam-si, KR;
Junhee Choi, Seongnam-si, KR;
Seog Woo Hong, Yongin-si, KR;
Joo Ho Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.