The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Aug. 07, 2008
Show-an Chen, Hsinchu, TW;
Hsin-hung LU, Hsinchu, TW;
Ching-yang Liu, Hsinchu, TW;
Chih-hao Chang, Hsinchu, TW;
Show-An Chen, Hsinchu, TW;
Hsin-Hung Lu, Hsinchu, TW;
Ching-Yang Liu, Hsinchu, TW;
Chih-Hao Chang, Hsinchu, TW;
National Tsing Hua University, Hsinchu, TW;
Abstract
A simple and efficient method for transforming conformation of parts of chains in the amorphous phase in a conjugated polymer to extended conjugation length (termed as β phase) is disclosed. The β phase acts as a dopant and can be termed self-dopant. The generated self-dopant in the amorphous host allows an efficient energy transfer and charge trapping to occur and leads to more balanced charge fluxes and more efficient charge recombination. For example, a polyfluorene film was dipped into a mixed solvent/non-solvent, tetrahydrofuran/methanol in volume ratio of 1:1, to generate a β-phase content up to 1.32%. A polymer light emitting diode with the dipped polyfluorene film as a light emitting layer therein provides a more pure and stable blue-emission (solely from the self-dopant) with CIE color coordinates x+y<0.3 and a performance of 3.85 cd A(external quantum efficiency 3.33%) and 34326 cd m.