The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2012

Filed:

Jan. 23, 2004
Applicants:

Norio Murase, Ikeda, JP;

Chunliang LI, Ikeda, JP;

Inventors:

Norio Murase, Ikeda, JP;

Chunliang Li, Ikeda, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 11/02 (2006.01); C09K 11/54 (2006.01); C09K 11/56 (2006.01); C09K 11/70 (2006.01); C09K 11/72 (2006.01); C09K 11/77 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a novel fluorescent material which has a luminance higher than that of the conventional rare earth ion-dispersed fluorescent materials and is excellent in light resistance and long-term stability, and also an optical device, such as a high-luminance display panel or lighting equipment, which uses such a fluorescent material. Semiconductor ultrafine particles are characterized by maintaining 50% or more fluorescence quantum yield of photoluminescence when they are kept dispersed in water at 10° C. to 20° C. in air for 5 days. The fluorescent material is obtained by dispersing such semiconductor ultrafine particles in a glass matrix using a sol-gel process.


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