The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Oct. 06, 2008
Applicants:
Caterina Riva, Cusago, IT;
Bruno Murari, Monza, IT;
Giovanni Frattini, Travaco' Siccomario, IT;
Inventors:
Assignee:
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.