The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Jan. 14, 2009
Applicants:
Yukio Terashima, Mishima, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Inventors:
Yukio Terashima, Mishima, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi,Aichi-ken, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 17/00 (2006.01); C30B 15/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.