The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
May. 04, 2011
Shucheng Chu, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Shucheng Chu, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A silicon light-emitting element includes a first conductivity type silicon substratehaving a first surfaceand a second surfaceon a side opposite to the first surface, an insulating filmprovided on the first surfaceof the silicon substrate, a silicon layerprovided on the insulating film, and having a second conductivity type different from the first conductivity type, a first electrodeprovided on the silicon layer, and a second electrodeprovided on the second surface of the silicon substrate, and the silicon substratehas a carrier concentration of 5×10cmto 5×10cm, the silicon layer 12 has a carrier concentration of 1×10cmto 5×10cm, and that is larger by one digit or more than the carrier concentration of the silicon substrate, and the insulating filmhas a film thickness of 0.3 nm to 5 nm. Accordingly, a silicon light-emitting element that is applicable to a silicon photonics light source is realized.