The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Mar. 16, 2011
Nozomi Shimoishizaka, Kyoto, JP;
Yoshifumi Nakamura, Osaka, JP;
Kouichi Nagao, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device including a semiconductor elementhaving an active element region, a plurality of element electrodesformed on a principal face of the semiconductor element, external terminalsandconnected to one or more element electrodes via connection membersand, one or more first heat-dissipation protrusionsformed on the principal face of the semiconductor element, an insulation resin layercovering the principal face of the semiconductor element and the first heat-dissipation protrusions, and a heat-dissipation mediumcontacting a face of the insulation resin layer on a side opposite to a side contacting front faces of the first heat-dissipation protrusions. At least a part of the active element region is included in a region below a bottom face of the first heat-dissipation protrusion, the first heat-dissipation protrusion is not connected to the external terminal within the active element region, a thermal conductivity of the first heat-dissipation protrusion is larger than a thermal conductivity of the insulation resin layer, and a thickness of the insulation resin layer from the front face of the first heat-dissipation protrusion to the heat-dissipation medium is thinner than a thickness of the insulation resin layer from the principal face of the semiconductor element to the heat-dissipation medium. Thereby, it is possible to improve the speed of dissipating heat from the active element region of the mounted semiconductor element to the heat-dissipation medium.