The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2012

Filed:

Jan. 20, 2011
Applicants:

Tomohiko Tsutsumi, Kawasaki, JP;

Taiji Ema, Kawasaki, JP;

Hideyuki Kojima, Kawasaki, JP;

Toru Anezaki, Kawasaki, JP;

Inventors:

Tomohiko Tsutsumi, Kawasaki, JP;

Taiji Ema, Kawasaki, JP;

Hideyuki Kojima, Kawasaki, JP;

Toru Anezaki, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor device includes a first MIS transistor including a gate insulating film, a gate electrodeformed on the gate insulating filmand source/drain regions, a second MIS transistor including a gate insulating filmthicker than the gate insulating film, a gate electrodeformed on the gate insulating film, source/drain regionsand a ballast resistorconnected to one of the source/drain regions, a salicide block insulating filmformed on the ballast resistorwith an insulating filmthinner than the gate insulating filminterposed therebetween, and a silicide filmformed on the source/drain regions


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