The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Apr. 29, 2008
Young-gu Jin, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
Won-joo Kim, Hwaseong-si, KR;
Seung-hoon Lee, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Young-gu Jin, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
Won-joo Kim, Hwaseong-si, KR;
Seung-hoon Lee, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Geyonggi-Do, KR;
Abstract
Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.