The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Jun. 30, 2009
Keiji Tsukada, Okayama, JP;
Keiji Tsukada, Okayama, JP;
National University Corporation Okayama University, Okayama, JP;
Abstract
A gas sensor () includes two field-effect transistors and gate electrodes on gate insulation films () of the two field-effect transistors to detect gas using the gate electrodes. The gas sensor () includes a first gate electrode (), a second gate electrode (), and voltage applying means. The first gate electrode () is provided on one of the field-effect transistors. The second gate electrode () is provided on another one of the field-effect transistors. The voltage applying means is for, with the first gate electrode () and the second gate electrode () coupled to one another by wiring, applying thereto one of a direct-current voltage and an alternating-current voltage having a same potential or a constant voltage difference. The first gate electrode () and the second gate electrode () are made of different metals. The one field-effect transistor and the other field-effect transistor have approximately the same structures.