The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Feb. 02, 2009
Applicants:
Toshiyuki Takizawa, Kyoto, JP;
Tetsuzo Ueda, Osaka, JP;
Manabu Usuda, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor light-emitting device includes a substrate () made of silicon, a mask film () made of silicon oxide, formed on a principal surface of the substrate (), and having at least one opening (), a seed layer () made of GaN selectively formed on the substrate () in the opening (), an LEG layer () formed on a side surface of the seed layer (), and an n-type GaN layer (), an active layer (), and a p-type GaN layer () which are formed on the LEG layer (). The LEG layer () is formed by crystal growth using an organic nitrogen material as a nitrogen source.