The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Oct. 26, 2006
Applicants:
Takeyoshi Masuda, Osaka, JP;
Shinji Matsukawa, Osaka, JP;
Inventors:
Takeyoshi Masuda, Osaka, JP;
Shinji Matsukawa, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
MOSFET is provided with SiC film. SiC film has a facet on its surface, and the length of one period of the facet is 100 nm or more, and the facet is used as channel. Further, a manufacturing method of MOSFET includes: a step of forming SiC film; a heat treatment step of heat-treating SiC film in a state where Si is supplied on the surface of SiC film; and a step of forming the facet obtained on the surface of SiC film by the heat treatment step into a channel. Thereby, it is possible to sufficiently improve the characteristics.