The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2012

Filed:

Apr. 09, 2009
Applicants:

Chentao Yu, Sunnyvale, CA (US);

Jianming Fu, Palo Alto, CA (US);

Jiunn Benjamin Heng, Redwood City, CA (US);

Inventors:

Chentao Yu, Sunnyvale, CA (US);

Jianming Fu, Palo Alto, CA (US);

Jiunn Benjamin Heng, Redwood City, CA (US);

Assignee:

Silevo, Inc., Fremont, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention provides a solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a first layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the first heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a second layer of heavily doped crystalline-Si situated above the lightly doped crystalline-Si layer, a first layer of dielectric situated above the second heavily doped crystalline-Si layer, a second layer of dielectric situated above the first dielectric layer, and front electrodes situated above the second dielectric layer.


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