The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Mar. 10, 2009
Chentao Yu, Sunnyvale, CA (US);
Jiunn Benjamin Heng, Redwood City, CA (US);
Zheng Xu, Pleasanton, CA (US);
Jianming Fu, Palo Alto, CA (US);
Jianjun Liang, Fremont, CA (US);
Chentao Yu, Sunnyvale, CA (US);
Jiunn Benjamin Heng, Redwood City, CA (US);
Zheng Xu, Pleasanton, CA (US);
Jianming Fu, Palo Alto, CA (US);
Jianjun Liang, Fremont, CA (US);
Silevo, Inc., Fremont, CA (US);
Abstract
One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile