The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Feb. 17, 2010
Applicant:
Tae-woo Jung, Ichon-shi, KR;
Inventor:
Tae-Woo Jung, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method includes forming a photoresist pattern over a certain portion of a material layer to expose an ion implantation region, implanting impurities in the ion implantation region of the material layer using the photoresist pattern as an ion implantation barrier, and removing the photoresist pattern using plasma of a gas mixture including a hydrocarbon-based gas.
Jung, Tae-Woo. (2012). Method of removing photoresist (U.S. Patent No. 8283242). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8283242
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile