The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Jan. 20, 2010
Applicants:
Masahiro Fukuda, Yokohama, JP;
Yosuke Shimamune, Yokohama, JP;
Yuka Kase, Yokohama, JP;
Inventors:
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions.