The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jun. 19, 2007
Tan Sakong, Yongin-si, KR;
Joong-kon Son, Yongin-si, KR;
Ho-sun Paek, Yongin-si, KR;
Sung-nam Lee, Yongin-si, KR;
Tan Sakong, Yongin-si, KR;
Joong-kon Son, Yongin-si, KR;
Ho-sun Paek, Yongin-si, KR;
Sung-nam Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of InGaN, where 0<x≦1, barrier layers formed of InGaN, where 0≦x<1, on opposite surfaces of the quantum well layer, and a diffusion preventing layer formed between the quantum well layer and at least one of the barrier layers. Due to the diffusion preventing layer between the quantum well layer and the barrier layers in the active layer, the light emission efficiency increases.