The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Jun. 24, 2010
Applicants:

Thierry Coffi Herve Yao, Portland, OR (US);

Gregory James Scott, Inkom, ID (US);

Inventors:

Thierry Coffi Herve Yao, Portland, OR (US);

Gregory James Scott, Inkom, ID (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electronic device can include a nonvolatile memory cell. In a particular embodiment, during an erase pulse, all unselected lines are at substantially the same voltage, and a row or segment of a row, such as a word, is erased during the erase pulse. In another embodiment, selected control gate and erase lines are at substantially the same voltage during a programming pulse. In a further embodiment, charge carriers tunnel through a dielectric layer of a component during a program pulse, and charge carriers tunnel through a different dielectric layer of a different component during an erase pulse.


Find Patent Forward Citations

Yao, Thierry Coffi Herve. (2012). Method of using a nonvolatile memory cell (U.S. Patent No. 8279681). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8279681

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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