The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
May. 14, 2010
Tai Sik Shin, Seoul, KR;
Kwang Ho Baek, Gyeonggi-do, KR;
Tai Sik Shin, Seoul, KR;
Kwang Ho Baek, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method of operating a nonvolatile memory device includes reading data stored in a main cell and a flag cell using a first read voltage, the nonvolatile memory device comprising the main cell for storing data including a least significant bit (LSB) and a most significant bit (MSB), and the flag cell for determining a program state of the main cell, determining a program state of the main cell based on the data read from the flag cell, reading data stored in the main cell and the flag cell using a second read voltage if a MSB page program has been performed on the main cell, and reading data stored in the main cell using a third or a fourth read voltage based on the data read from the flag cell using the second read voltage, if a threshold voltage of the main cell shifts.