The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
May. 26, 2010
Bernard Dieny, Lans en Vercors, FR;
Cristian Papusoi, Grenoble, FR;
Ursula Ebels, Grenoble, FR;
Dimitri Houssameddine, Grenoble, FR;
Liliana Buda-prejbeanu, Sassenage, FR;
Ricardo Sousa, Grenoble, FR;
Bernard Dieny, Lans en Vercors, FR;
Cristian Papusoi, Grenoble, FR;
Ursula Ebels, Grenoble, FR;
Dimitri Houssameddine, Grenoble, FR;
Liliana Buda-Prejbeanu, Sassenage, FR;
Ricardo Sousa, Grenoble, FR;
Institut Polytechnique de Grenoble, Grenoble, FR;
Le Centre National de la Recherche Scientifique, Paris, FR;
Le Commissariat a l'Energie Atomique et aux Energies Altenatives, Paris, FR;
Abstract
A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.