The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Sep. 10, 2010
Phase change memory device, memory system, and programming method using variable verification pulses
Sang-hoan Chang, Suwon-si, KR;
Seong-moo Heo, Seoul, KR;
Kwang-suk Yu, Yongin-si, KR;
Yeong-taek Lee, Seoul, KR;
Woo-yeong Cho, Suwon-si, KR;
Sang-Hoan Chang, Suwon-si, KR;
Seong-Moo Heo, Seoul, KR;
Kwang-Suk Yu, Yongin-si, KR;
Yeong-Taek Lee, Seoul, KR;
Woo-Yeong Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In a method of programming a phase change memory device, write data is programmed in a plurality of phase change memory cells by applying write pulses to each of the plurality of phase change memory cells. Whether each of the phase change memory cells is programmed is verified by applying verification pulses to each of the phase-change memory cells. A number of applications for the verification pulses and the intervals between respective applications of the verification pulses are varied in accordance with a verification result for each of the phase-change memory cells.