The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jul. 15, 2010
Assaf Lahav, Binyamina, IL;
Amos Fenigstein, Haifa, IL;
Assaf Lahav, Binyamina, IL;
Amos Fenigstein, Haifa, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A CMOS image sensor uses a special exposure control circuit to independently adjust the photodiode exposure (integration) time for each pixel in a pixel array to obtain non-saturated photodiode charges for each pixel. Exposure time adjustment involves extrapolating a pixel's final photodiode charge using an intermediate photodiode charge measured after a predetermined portion of an exposure frame period. If the intermediate photodiode charge is, e.g., over 50% of the photodiode's full-well capacity after half of the exposure frame period, then saturation is likely and the photodiode is reset to integrate only during the remaining time. If not, then the photodiode integrates over the allotted exposure frame period. Data indicating the length of the exposure portion is stored as analog data on the memory node of each pixel, and readout of the final photodiode charge is performed using Correlated Double Sampling (CDS) techniques.