The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Sep. 03, 2010
Yeh-ning Jou, Taipei County, TW;
Chia-wei Hung, Nantou County, TW;
Shu-ling Chang, Hsinchu, TW;
Hwa-chyi Chiou, Hsinchu, TW;
Yeh-jen Huang, Hsinchu, TW;
Yeh-Ning Jou, Taipei County, TW;
Chia-Wei Hung, Nantou County, TW;
Shu-Ling Chang, Hsinchu, TW;
Hwa-Chyi Chiou, Hsinchu, TW;
Yeh-Jen Huang, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
An electrostatic discharge protection device coupled between a first power line and a second power line is provided. A first N-type doped region is formed in a P-type well. A first P-type doped region is formed in the first N-type doped region. A second P-type doped region includes a first portion and a second portion. The first portion of the second P-type doped region is formed in the first N-type doped region. The second portion of the second P-type doped region is formed outside of the first N-type doped region. A second N-type doped region is formed in the first portion of the second P-type doped region. The first P-type doped region, the first N-type doped region, the second P-type doped region and the second N-type doped region constitute an insulated gate bipolar transistor (IGBT).