The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Dec. 30, 2009
Byoung-keon Park, Yongin, KR;
Dong-hyun Lee, Yongin, KR;
Kil-won Lee, Yongin, KR;
Tae-hoon Yang, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Ji-su Ahn, Yongin, KR;
Maxim Lisachenko, Yongin, KR;
Byoung-Keon Park, Yongin, KR;
Dong-Hyun Lee, Yongin, KR;
Kil-Won Lee, Yongin, KR;
Tae-Hoon Yang, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Ji-Su Ahn, Yongin, KR;
Maxim Lisachenko, Yongin, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.