The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Mar. 06, 2009
Applicants:
Jungcheng Kao, San Jose, CA (US);
Yanjun LI, Shanghai, CN;
Inventors:
Jungcheng Kao, San Jose, CA (US);
Yanjun Li, Shanghai, CN;
Assignee:
O2Micro Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01);
U.S. Cl.
CPC ...
Abstract
A cellular transistor includes an N-type heavily doped (N+) buried layer (NBL), an N-well connected to the NBL, an N+ layer connected to the N-well and multiple drains. The N-well is formed after formation of the NBL. The N+ layer is formed after formation of the N-well. The multiple drains are connected to the NBL via the N-well and the N+ layer.
Quick Actions:
Kao, Jungcheng. (2012). Power mosfet integration (U.S. Patent No. 8278712). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8278712
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile