The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Nov. 23, 2010
Ramakrishna Rao, Bangalore, IN;
Stephen Daley Arthur, Glenville, NY (US);
Peter Almern Losee, Clifton Park, NY (US);
Kevin Dean Matocha, Rexford, NY (US);
Ramakrishna Rao, Bangalore, IN;
Stephen Daley Arthur, Glenville, NY (US);
Peter Almern Losee, Clifton Park, NY (US);
Kevin Dean Matocha, Rexford, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A substrate having semiconductor material and a surface that supports a gate electrode and defines a surface normal direction is provided. The substrate can include a drift region including a first dopant type. A well region can be disposed adjacent to the drift region and proximal to the surface, and can include a second dopant type. A termination extension region can be disposed adjacent to the well region and extend away from the gate electrode, and can have an effective concentration of second dopant type that is generally less than that in the well region. An adjust region can be disposed between the surface and at least part of the termination extension region. An effective concentration of second dopant type may generally decrease when moving from the termination extension region into the adjust region along the surface normal direction.