The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Dec. 17, 2007
Masayuki Terai, Tokyo, JP;
Masayuki Terai, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In the trap type memory chip the withstanding voltage is raised up, and then the electric current for reading out is increased. There are formed on the p-type semiconductor substratea first gate lamination structure which comprises a first insulating filmincluding a trap layer, and a first conductive body, and a second gate lamination structure which comprises a second insulating filmfree of a trap layer and including an insulating film layerdoped with metal for controlling the work function at least on the upper layer, and a second conductive body. A source drain regionand a source drain regionare formed such that the first gate lamination structure and the second gate lamination structure are interleaved therebetween. The effective work function of the second gate lamination structure is higher than that of the first gate lamination structure.