The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Mar. 25, 2011
Taro Osabe, Kokubunji, JP;
Tomoyuki Ishii, Hachioji, JP;
Kazuo Yano, Hino, JP;
Takashi Kobayashi, Tokorozawa, JP;
Taro Osabe, Kokubunji, JP;
Tomoyuki Ishii, Hachioji, JP;
Kazuo Yano, Hino, JP;
Takashi Kobayashi, Tokorozawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.