The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jan. 17, 2012
Masayuki Tanaka, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Ryota Fujitsuka, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Katsuaki Natori, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Ryota Fujitsuka, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Katsuaki Natori, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film.