The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Sep. 19, 2011
Applicants:

Qiang Tang, Cupertino, CA (US);

Min She, Fremont, CA (US);

Ken Liao, Santa Clara, CA (US);

Inventors:

Qiang Tang, Cupertino, CA (US);

Min She, Fremont, CA (US);

Ken Liao, Santa Clara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory array including a diffusion layer, a poly layer, a metal one layer, a metal two layer, and a contact. The diffusion layer comprises diffusion lines extending in a first direction. The poly layer comprises poly lines extending in the first direction and being arranged on top of and insulated from the diffusion layer. The metal one layer comprises metal one lines extending in the first direction and being arranged on top of and insulated from the poly layer. The metal two layer comprises a metal two line extending in the first direction and being arranged on top of and insulated from the metal one layer. The contact extends through the poly layer, and connects a metal one line to a diffusion line. A poly line further extends in a second direction to bend around the contact such that a predetermined distance separates the poly lines from the contact.


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