The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Jan. 06, 2011
Applicants:

Yoshitaka Dozen, Tochigi, JP;

Tomoyuki Aoki, Tochigi, JP;

Hidekazu Takahashi, Tochigi, JP;

Daiki Yamada, Tochigi, JP;

Kaori Ogita, Tochigi, JP;

Naoto Kusumoto, Isehara, JP;

Inventors:

Yoshitaka Dozen, Tochigi, JP;

Tomoyuki Aoki, Tochigi, JP;

Hidekazu Takahashi, Tochigi, JP;

Daiki Yamada, Tochigi, JP;

Kaori Ogita, Tochigi, JP;

Naoto Kusumoto, Isehara, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract

Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.


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