The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Oct. 27, 2011
Hongyong Zhang, Kanagawa, JP;
Hideki Uochi, Kanagawa, JP;
Toru Takayama, Kanagawa, JP;
Takeshi Fukunaga, Kanagawa, JP;
Yasuhiko Takemura, Kanagawa, JP;
Hongyong Zhang, Kanagawa, JP;
Hideki Uochi, Kanagawa, JP;
Toru Takayama, Kanagawa, JP;
Takeshi Fukunaga, Kanagawa, JP;
Yasuhiko Takemura, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.