The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Jul. 11, 2008
Applicants:

Eric Mattmann, Paris, FR;

Pascal Reutler, Paris, FR;

Fabien Lienhart, Paris, FR;

Inventors:

Eric Mattmann, Paris, FR;

Pascal Reutler, Paris, FR;

Fabien Lienhart, Paris, FR;

Assignee:

Saint-Gobain Glass France, Courbevoie, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/22 (2006.01); H01L 31/0256 (2006.01); H01L 31/0296 (2006.01);
U.S. Cl.
CPC ...
Abstract

The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material () coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer (). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material () and said at least one zinc-oxide-based layer () is at least one intermediate layer () comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).


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